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 DISCRETE SEMICONDUCTORS
DATA SHEET
age
MBD128
PBSS5240Y 40 V low VCEsat PNP transistor
Product specification Supersedes data of 2001 Oct 24 2002 Feb 28
Philips Semiconductors
Product specification
40 V low VCEsat PNP transistor
FEATURES * Low collector-emitter saturation voltage * High current capability * Improved device reliability due to reduced heat generation * Replacement for SOT89/SOT223 standard packaged transistors due to enhanced performance. APPLICATIONS * Supply line switching circuits * Battery management applications * DC/DC converter applications * Strobe flash units * Heavy duty battery powered equipment (motor and lamp drivers). DESCRIPTION PNP low VCEsat transistor in a SOT363 (SC-88) plastic package. NPN complement: PBSS4240Y. MARKING
handbook, halfpage
PBSS5240Y
QUICK REFERENCE DATA SYMBOL VCEO ICM IC RCEsat PINNING PIN 1 2 3 4 5 6 collector collector base emitter collector collector DESCRIPTION PARAMETER collector-emitter voltage peak collector current collector current (DC) equivalent on-resistance MAX. -40 -3 -2 <200 UNIT V A A m
6
5
4
1, 2, 5, 6 3 4
TYPE NUMBER PBSS5240Y Note 1. * = p: made in Hongkong. * = t: made in Malaysia. 52*
MARKING CODE(1)
1
2
Top view
3
MAM464
Fig.1
Simplified outline (SOT363; SC-88) and symbol.
2002 Feb 28
2
Philips Semiconductors
Product specification
40 V low VCEsat PNP transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Notes PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 C; note 1 Tamb 25 C; note 2 CONDITIONS open emitter open base open collector - - - - - - - - -65 - -65 MIN.
PBSS5240Y
MAX. -40 -40 -5 -2 -3 -300 270 430 +150 150 +150 V V V A A
UNIT
mA mW mW C C C
1. Device mounted on a printed-circuit board, single side copper, tinplated and standard footprint. 2. Device mounted on a printed-circuit board, single side copper, tinplated and mounting pad for collector 1 cm2. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient note 1 note 2 CONDITIONS VALUE 463 291 UNIT K/W K/W
Notes 1. Device mounted on a printed-circuit board, single side copper, tinplated and standard footprint. 2. Device mounted on a printed-circuit board, single side copper, tinplated and mounting pad for collector 1 cm2.
2002 Feb 28
3
Philips Semiconductors
Product specification
40 V low VCEsat PNP transistor
CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER CONDITIONS - - - 300 260 210 100 - - - - - - - - VCB = -30 V; IE = 0; Tj = 150 C emitter-base cut-off current DC current gain VEB = -4 V; IC = 0 VCE = -2 V; IC = -100 mA VCE = -2 V; IC = -500 mA VCE = -2 V; IC = -1000 mA VCE = -2 V; IC = -2000 mA VCEsat collector-emitter saturation voltage IC = -100 mA; IB = -1 mA IC = -500 mA; IB = -50 mA IC = -750 mA; IB = -15 mA IC = -1000 mA; IB = -50 mA IC = -2000 mA; IB = -200 mA VBEsat VBEon Cc FT base-emitter saturation voltage collector capacitance transition frequency IC = -2000 mA; IB = -200 mA MIN.
PBSS5240Y
MAX. -100 -50 -100 - - - - -100 -110 -225 -225 -350 -1.1 -0.75 40 -
UNIT nA A nA
collector-base cut-off current VCB = -30 V; IE = 0
mV mV mV mV mV V V pF MHz
base-emitter turn-on voltage VCE = -2 V; IC = -100 mA VCB = -10 V; IE = Ie = 0; f = 1 MHz
IC = -100 mA; VCE = -10 V; f = 100 MHz 100
2002 Feb 28
4
Philips Semiconductors
Product specification
40 V low VCEsat PNP transistor
PACKAGE OUTLINE Plastic surface mounted package; 6 leads
PBSS5240Y
SOT363
D
B
E
A
X
y
HE
vMA
6
5
4
Q
pin 1 index
A
A1
1
e1 e
2
bp
3
wM B detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.30 0.20 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.25 0.15 v 0.2 w 0.2 y 0.1
OUTLINE VERSION SOT363
REFERENCES IEC JEDEC EIAJ SC-88
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
2002 Feb 28
5
Philips Semiconductors
Product specification
40 V low VCEsat PNP transistor
DATA SHEET STATUS DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2) Development DEFINITIONS
PBSS5240Y
This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A.
Preliminary data
Qualification
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2002 Feb 28
6
Philips Semiconductors
Product specification
40 V low VCEsat PNP transistor
NOTES
PBSS5240Y
2002 Feb 28
7
Philips Semiconductors - a worldwide company
Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
(c) Koninklijke Philips Electronics N.V. 2002
SCA74
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/02/pp8
Date of release: 2002
Feb 28
Document order number:
9397 750 09503


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